ACE4441B p - channel enhancement mode field effect transistor ver 1. 2 1 d escription the ACE4441B uses advanced trench technology to provide excellent r ds(on) , and ultra - low low gate charge. this device is suitable for use as a load switch or in pwm applications. features ? v ds (v)= - 6 0v ? i d = - 4 a (v gs = - 10v) ? r ds(on) 75 m ( v gs = - 10 v ) ? r ds(on) 90 m ( v gs = - 4.5 v ) absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 6 0 v gate - source voltage v gs 20 v drain current (continuous) * ac t a =25 o c i d - 4 a t a =70 o c - 3.2 drain current (pulse) * b i dm - 20 power dissi pation t a =25 o c p d 3 w t a =70 o c 2.1 operating and storage temperature range t j , t stg - 55 to 150 o c packaging type so p - 8 ordering i nformation ACE4441B xx + h fm : sop - 8 pb - free halogen - free
ACE4441B p - channel enhancement mode field effect transistor ver 1.2 2 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source brea kdown voltage v (br)dss v gs =0v, i d = - 250ua - 6 0 v zero gate voltage drain current i dss v ds = - 4 8 v, v gs =0v - 1 ua gate leakage current i gss v gs = 20 v, v ds =0v 100 na static drain - source on - resistance r ds(on) v gs = - 10 v, i d = - 4 .5a 6 4 7 5 m v gs = - 4.5 v, i d = - 3 .5a 7 9 9 0 gate threshold voltage v gs(th) v ds =v gs , i d s = - 250 a - 1 . 0 - 1 . 7 - 2 .5 v forward transconductance g fs v g s = - 10 v, i d = - 7 a 9 s diode forward voltage v sd i sd = - 1a, v gs =0v - 0.7 6 - 1 v maximum body - diode continuous current i s - 3 a switching total gate charge q g v ds = - 3 0 v, i d = - 7 a v gs = - 1 0 v 1 5 1 9 nc gate - source charge q gs 2 . 5 gate - drain charge q gd 3 turn - on delay time t d(on) v d s = - 3 0 v, r l = 1 0 , v g s = - 10 v , r g en = 3 8 1 6 ns turn - on rise time t f 3 . 8 7 . 6 turn - off delay time t d(off) 3 1 . 5 6 3 turn - off fall time t f 7 . 5 1 5 dynamic input capacitance c iss v ds = - 3 0 v, v gs = 0v f= 1m hz 7 6 0 pf output capacitance c oss 9 0 reverse transfer capacitance c rss 4 0 note: 1. the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. 2. repeti tive rating, pulse width limited by junction temperature. 3. the current rating is based on the t 10s junction to ambient thermal resistance rating.
ACE4441B p - channel enhancement mode field effect transistor ver 1.2 3 typical performance characteristics
ACE4441B p - channel enhancement mode field effect transistor ver 1.2 4 typical perfo rmance characteristics
ACE4441B p - channel enhancement mode field effect transistor ver 1.2 5 packing information so p - 8 unit: mm
ACE4441B p - channel enhancement mode field effect transistor ver 1.2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or syste ms which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
|
